FQD50N06 (50A 60V 50N06) TO252 N-CH MOSFET

The FQD50N06 is a robust N-Channel MOSFET housed in a compact TO-252 (DPAK) package, engineered for high-current, low-voltage switching applications. With a 60V drain-source rating and support for up to 50A continuous current, this MOSFET is ideal for high-efficiency motor drivers, battery management systems, and fast-switching PWM circuits.

Designed with an ultra-low R(DS(on)) of 18mΩ @ V(GS)=10V, it minimizes conduction losses. It also features logic-level gate drive compatibility, making it suitable for 5V or 3.3V logic microcontroller-based systems.

✅ Key Features:

• Drain-Source Voltage: 60V

• Continuous Drain Current: 50A

• R(DS(on)): 18mΩ @10V V(GS)

• Logic-Level Gate Threshold: 4.5V

• Package Type: TO-252 (DPAK)

• Gate Charge (Q(g)): 60nC (fast switching)

• Avalanche Rated: Yes

• Mounting: Surface-mount (SMD)

✅ Applications:

→ DC motor drivers
→ 12V to 48V battery systems
→ High-current PWM control circuits
→ Load switches and power inverters
→ Power tools and robotics