IRFP260NPbF N-Channel Power MOSFET – 200V 50A – TO-247AC – Infineon

The IRFP260NPbF from Infineon is a high-performance N-Channel HEXFET® Power MOSFET designed for demanding high-current, high-voltage switching applications. Engineered with low Rds(on), fast switching characteristics, and robust avalanche capability, this device is ideal for power conversion systems, motor drives, high-power inverters, SMPS, and industrial automation equipment.

With a Drain-Source voltage rating of 200V and a continuous drain current of up to 50A (Tc = 25°C), the IRFP260NPbF delivers exceptional efficiency and reliability under heavy loads. Its 40mΩ max Rds(on) ensures low conduction losses, while the high 300W power dissipation rating enables operation in thermally demanding environments. The MOSFET also features a rugged TO-247AC through-hole package, suitable for high-power PCB designs and heat-sink mounting.

Advanced characteristics such as a dynamic dv/dt rating, fully avalanche-rated structure, ease of paralleling, and low gate-drive requirements make this device highly stable and efficient in switching applications operating across –55°C to +175°C.

Key Specifications:

• Manufacturer: Infineon

• Part Number: IRFP260NPbF

• Type: N-Channel Power MOSFET

• Vds: 200V max

• Id (continuous): 50A @ Tc=25°C / 35A @ Tc=100°C

• Rds(on): 40mΩ max @ Vgs=10V, Id=28A

• Power Dissipation: 300W (Tc = 25°C)

• Gate Charge (Qg): 180–234 nC typical

• Package: TO-247AC (through-hole)

• Features:
  – Fast switching
  – Fully avalanche rated
  – Dynamic dv/dt ruggedness
  – Low conduction losses
  – Suitable for paralleling

Package Includes:
1 x IRFP260NPbF N-Channel Power MOSFET

Note: Image is for representation purpose only.