MMBTA06LT3G NPN SOT-23 Transistor 80V 500mA onsemi

The MMBTA06LT3G is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi and packaged in a compact SOT-23 surface-mount package. Designed for switching and signal amplification applications, this transistor supports a collector-emitter voltage of up to 80V and a collector current of 500mA, making it suitable for a wide range of low-power electronic circuits.

With a power dissipation of 225mW and a transition frequency of 100MHz, the MMBTA06LT3G offers reliable performance for high-speed switching and amplification tasks. Its low collector-emitter saturation voltage ensures efficient operation with minimal power loss.

This SMD transistor is widely used in consumer electronics, communication equipment, embedded systems, and general-purpose electronic designs.

Key Specifications:
Manufacturer: onsemi
Model: MMBTA06LT3G
Transistor Type: NPN BJT
Package: SOT-23 (SMD)
Collector-Emitter Voltage (VCEO): 80V
Collector Current (IC): 500mA
Power Dissipation (Pd): 225mW
DC Current Gain (hFE): 100 @ 100mA
Transition Frequency (fT): 100MHz
Collector Cutoff Current: 100nA
Saturation Voltage VCE(sat): 250mV
Operating Temperature Range: -55°C to +150°C

Applications:
Signal amplification circuits
High-speed switching circuits
Embedded system electronics
Consumer electronic devices
General-purpose SMD transistor applications

Package Includes:
1 x MMBTA06LT3G NPN SOT-23 Transistor

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