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- MMBTA56 80V 500mA PNP Transistor SOT-23 JCET MMBTA56 80V 500mA PNP Transistor SOT-23 JCET
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Manufacturer Part No.MMBTA56
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ManufacturerJCET
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Device TypeBipolar Junction Transistor (BJT)
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Transistor PolarityPNP
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Collector-Emitter Voltage (VCEO)80V
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Collector Current (IC)500mA
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DC Current Gain (hFE)100 @ 10mA
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Power Dissipation225mW
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Transition Frequency (fT)50MHz
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Package TypeSOT-23
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Mounting TypeSurface Mount (SMD)
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Operating Temperature Range-55°C to +150°C
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RoHS ComplianceYes
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Transistor TechnologySilicon PNP BJT
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Signal TypeGeneral Purpose Small-Signal Transistor
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Switching CapabilityHigh-Speed Switching Applications
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Amplification TypeSmall-Signal Amplification
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ApplicationsAudio Amplifiers, Signal Conditioning, Switching Circuits, Level Shifters, Driver Circuits
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Suitable ForConsumer Electronics, Industrial Controls, Embedded Systems, Communication Circuits, Analog Signal Processing
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FeaturesCompact SOT-23 Package, High Voltage Rating, Low Power Consumption, Reliable Switching Performance, Wide Temperature Range
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FunctionSignal Amplification and Electronic Switching
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Electrical CharacteristicsHigh Gain, Fast Transition Frequency, Low Power Dissipation, Stable Operation Across Temperature Range
- Description
- Specifications
- Reviews
The JCET MMBTA56 is a general-purpose PNP bipolar junction transistor (BJT) in a compact SOT-23 SMD package, rated at 80V collector-emitter voltage and 500mA collector current. With a DC current gain of 100 at 10mA, 225mW power dissipation, and 50MHz transition frequency, it is ideal for audio amplifiers, signal conditioning, switching circuits, level shifters, and small-signal amplification applications.
Key Specifications
- Manufacturer: JCET
- Manufacturer Part No.: MMBTA56
- Transistor Type: PNP BJT
- Collector-Emitter Voltage (Vceo): 80V
- Collector Current (Ic): 500 mA
- DC Current Gain (hFE): 100 @ 10mA
- Power Dissipation: 225 mW
- Transition Frequency (ft): 50 MHz
- Package: SOT-23 (SMD)
- Operating Temperature: -55°C to +150°C
- RoHS Compliant: Yes
Package Includes
- 1 x 80V 500mA PNP Transistor SOT-23 JCET
Note: Image is for representation purpose only.
Key Specifications
Everything you need to know about MMBTA56 80V 500mA PNP Transistor SOT-23 JCET at a glance.
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Manufacturer Part No.MMBTA56
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ManufacturerJCET
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Device TypeBipolar Junction Transistor (BJT)
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Transistor PolarityPNP
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Collector-Emitter Voltage (VCEO)80V
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Collector Current (IC)500mA
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DC Current Gain (hFE)100 @ 10mA
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Power Dissipation225mW
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Transition Frequency (fT)50MHz
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Package TypeSOT-23
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Mounting TypeSurface Mount (SMD)
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Operating Temperature Range-55°C to +150°C
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RoHS ComplianceYes
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Transistor TechnologySilicon PNP BJT
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Signal TypeGeneral Purpose Small-Signal Transistor
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Switching CapabilityHigh-Speed Switching Applications
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Amplification TypeSmall-Signal Amplification
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ApplicationsAudio Amplifiers, Signal Conditioning, Switching Circuits, Level Shifters, Driver Circuits
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Suitable ForConsumer Electronics, Industrial Controls, Embedded Systems, Communication Circuits, Analog Signal Processing
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FeaturesCompact SOT-23 Package, High Voltage Rating, Low Power Consumption, Reliable Switching Performance, Wide Temperature Range
-
FunctionSignal Amplification and Electronic Switching
-
Electrical CharacteristicsHigh Gain, Fast Transition Frequency, Low Power Dissipation, Stable Operation Across Temperature Range