MMBT5551-7-F High-Voltage NPN BJT Transistor – 160V 600mA SOT-23 SMD

The MMBT5551-7-F is a high-performance, low-leakage high-voltage NPN Bipolar Junction Transistor (BJT) packaged in an industry-standard SOT-23 footprint. Engineered for small-signal amplification and high-voltage power management, it supports a collector-emitter breakdown voltage (V_CEO) of 160V and a continuous collector current (I_C) of 600mA. With a 300MHz transition frequency (f_T), it is an ideal choice for high-voltage switching networks, telephone line interfaces, gas discharge displays, and linear sensor circuits.

Key Specifications

• Manufacturer: Diodes Incorporated
• Part Number: MMBT5551-7-F (suffix "-F" = Halogen-Free / Green)
• Transistor Type: NPN Small Signal BJT
• Package / Case: SOT-23-3 (Surface Mount)
• Collector-Emitter Voltage (V_CEO): 160 V max
• Collector-Base Voltage (V_CBO): 180 V max
• Emitter-Base Voltage (V_EBO): 6.0 V max
• Continuous Collector Current (I_C): 600 mA
• DC Current Gain (h_FE): 80 to 250 (at I_C = 10mA)
• V_CE(sat): 150 mV max (at I_C = 10mA, I_B = 1mA) / 200 mV max (at I_C = 50mA, I_B = 5mA)
• Transition Frequency (f_T): 300 MHz
• Power Dissipation (P_d): 350 mW
• MSL: Level 1
• Pinout: Pin 1 = Base (B), Pin 2 = Emitter (E), Pin 3 = Collector (C)
• Compliance: RoHS, Lead-Free, Halogen & Antimony Free

Package Includes

• 1 x MMBT5551-7-F NPN BJT Transistor (SOT-23)

Note: Image is for representation purpose only.