MMBT3906 40V 200mA PNP Transistor SOT-23 SMD MSKSEMI

The MSKSEMI MMBT3906-MS is a general-purpose PNP bipolar junction transistor (BJT) in a compact SOT-23 SMD package, rated at 40V collector-emitter voltage and 200mA collector current. With a high DC current gain (hFE) of 300, 200mW power dissipation, and 300mV VCE saturation, it is ideal for audio amplifiers, signal conditioning, switching circuits, level shifters, and small-signal amplification applications.

Key Specifications

• Manufacturer: MSKSEMI
• Manufacturer Part No.: MMBT3906-MS
• Transistor Type: PNP BJT
• Collector-Emitter Voltage (Vceo): 40V
• Collector Current (Ic): 200 mA
• DC Current Gain (hFE): 300
• VCE Saturation: 300 mV
• Power Dissipation: 200 mW
• Package: SOT-23 (SMD)
• Operating Temperature: -55°C to +150°C
• RoHS Compliant: Yes

Package Includes

• 1 x 40V 200mA PNP Transistor SOT-23 SMD MSKSEMI

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