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- AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON) AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)
AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)
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Manufacturer Part No.AO3401A
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Device TypeP-Channel Enhancement Mode MOSFET
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MOSFET TypeP-Channel Enhancement Mode
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TechnologyTrench MOSFET
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PackageSOT-23
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Mounting TypeSurface Mount (SMD)
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Drain-Source Voltage (VDS)−30V
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Gate-Source Voltage (VGS)±12V
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Continuous Drain Current (ID)−4 A
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Pulsed Drain Current (IDM)−27 A
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Maximum Power Dissipation (PD)1.4 W
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RDS(ON) @ VGS=−10V≤50 mΩ
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RDS(ON) @ VGS=−4.5V≤60 mΩ
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RDS(ON) @ VGS=−2.5V≤85 mΩ
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Gate Threshold Voltage (VGS(th))−0.5V to −1.3V
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Pin ConfigurationPin 1 = Gate (G), Pin 2 = Source (S), Pin 3 = Drain (D)
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Operating FunctionP-Channel high-side load switching and power management
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ApplicationsHigh-side load switching, Battery Management Systems (BMS), reverse polarity protection, DC-DC converters, power management, LED backlight control, portable electronics, IoT devices, embedded systems, motor control, PWM switching
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Suitable ForLogic-level microcontroller drive (2.5V, 3.3V, 5V), battery-powered compact designs
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FeaturesUltra-low RDS(ON), logic-level gate drive, trench technology, fast switching, low gate charge
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FunctionProvides efficient P-Channel high-side switching with minimal power loss for battery and power management circuits
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Electrical CharacteristicsVDS −30V, ID −4A, IDM −27A, RDS(ON) ≤50mΩ @ −10V, VGS(th) −0.5V to −1.3V
- Description
- Specifications
- Reviews
The AO3401A is a high-performance P-Channel Enhancement Mode MOSFET manufactured using advanced trench technology to deliver low on-resistance and efficient switching performance. Packaged in a compact SOT-23 surface-mount package, it is widely used for battery-powered and low-voltage electronic applications.
With a −30V drain-source voltage (VDS) rating and −4A continuous drain current, the AO3401A provides excellent efficiency for high-side load switching, reverse polarity protection, battery management systems, and portable electronics. Its low gate threshold voltage allows direct operation from 2.5V, 3.3V, and 5V logic without requiring a dedicated gate driver. Ultra-low RDS(ON) minimizes power loss and heat generation.
Key Specifications
- Part Number: AO3401A
- MOSFET Type: P-Channel Enhancement Mode
- Package: SOT-23
- Mounting Type: Surface Mount (SMD)
- Drain-Source Voltage (VDS): −30V
- Gate-Source Voltage (VGS): ±12V
- Continuous Drain Current (ID): −4 A
- Pulsed Drain Current (IDM): −27 A
- Maximum Power Dissipation (PD): 1.4 W
- RDS(ON): ≤50mΩ @ VGS=−10V / ≤60mΩ @ VGS=−4.5V / ≤85mΩ @ VGS=−2.5V
- Gate Threshold Voltage (VGS(th)): −0.5V to −1.3V
- Technology: Trench MOSFET
- Pin 1: Gate (G) | Pin 2: Source (S) | Pin 3: Drain (D)
Package Includes
- 1 x AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)
Note: Image is for representation purpose only.
AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)
Everything you need to know about AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON) at a glance.
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Manufacturer Part No.AO3401A
-
Device TypeP-Channel Enhancement Mode MOSFET
-
MOSFET TypeP-Channel Enhancement Mode
-
TechnologyTrench MOSFET
-
PackageSOT-23
-
Mounting TypeSurface Mount (SMD)
-
Drain-Source Voltage (VDS)−30V
-
Gate-Source Voltage (VGS)±12V
-
Continuous Drain Current (ID)−4 A
-
Pulsed Drain Current (IDM)−27 A
-
Maximum Power Dissipation (PD)1.4 W
-
RDS(ON) @ VGS=−10V≤50 mΩ
-
RDS(ON) @ VGS=−4.5V≤60 mΩ
-
RDS(ON) @ VGS=−2.5V≤85 mΩ
-
Gate Threshold Voltage (VGS(th))−0.5V to −1.3V
-
Pin ConfigurationPin 1 = Gate (G), Pin 2 = Source (S), Pin 3 = Drain (D)
-
Operating FunctionP-Channel high-side load switching and power management
-
ApplicationsHigh-side load switching, Battery Management Systems (BMS), reverse polarity protection, DC-DC converters, power management, LED backlight control, portable electronics, IoT devices, embedded systems, motor control, PWM switching
-
Suitable ForLogic-level microcontroller drive (2.5V, 3.3V, 5V), battery-powered compact designs
-
FeaturesUltra-low RDS(ON), logic-level gate drive, trench technology, fast switching, low gate charge
-
FunctionProvides efficient P-Channel high-side switching with minimal power loss for battery and power management circuits
-
Electrical CharacteristicsVDS −30V, ID −4A, IDM −27A, RDS(ON) ≤50mΩ @ −10V, VGS(th) −0.5V to −1.3V