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  • AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON) AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)
20% Rs. 0.80
AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)
AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)
AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)
AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)
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AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)

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Product SKU: CC-001119
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AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)
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  • Manufacturer Part No.
    AO3401A
  • Device Type
    P-Channel Enhancement Mode MOSFET
  • MOSFET Type
    P-Channel Enhancement Mode
  • Technology
    Trench MOSFET
  • Package
    SOT-23
  • Mounting Type
    Surface Mount (SMD)
  • Drain-Source Voltage (VDS)
    −30V
  • Gate-Source Voltage (VGS)
    ±12V
  • Continuous Drain Current (ID)
    −4 A
  • Pulsed Drain Current (IDM)
    −27 A
  • Maximum Power Dissipation (PD)
    1.4 W
  • RDS(ON) @ VGS=−10V
    ≤50 mΩ
  • RDS(ON) @ VGS=−4.5V
    ≤60 mΩ
  • RDS(ON) @ VGS=−2.5V
    ≤85 mΩ
  • Gate Threshold Voltage (VGS(th))
    −0.5V to −1.3V
  • Pin Configuration
    Pin 1 = Gate (G), Pin 2 = Source (S), Pin 3 = Drain (D)
  • Operating Function
    P-Channel high-side load switching and power management
  • Applications
    High-side load switching, Battery Management Systems (BMS), reverse polarity protection, DC-DC converters, power management, LED backlight control, portable electronics, IoT devices, embedded systems, motor control, PWM switching
  • Suitable For
    Logic-level microcontroller drive (2.5V, 3.3V, 5V), battery-powered compact designs
  • Features
    Ultra-low RDS(ON), logic-level gate drive, trench technology, fast switching, low gate charge
  • Function
    Provides efficient P-Channel high-side switching with minimal power loss for battery and power management circuits
  • Electrical Characteristics
    VDS −30V, ID −4A, IDM −27A, RDS(ON) ≤50mΩ @ −10V, VGS(th) −0.5V to −1.3V
Rs. 3.20
Rs. 4.00
 
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  • Description
  • Specifications
  • Reviews

The AO3401A is a high-performance P-Channel Enhancement Mode MOSFET manufactured using advanced trench technology to deliver low on-resistance and efficient switching performance. Packaged in a compact SOT-23 surface-mount package, it is widely used for battery-powered and low-voltage electronic applications.

With a −30V drain-source voltage (VDS) rating and −4A continuous drain current, the AO3401A provides excellent efficiency for high-side load switching, reverse polarity protection, battery management systems, and portable electronics. Its low gate threshold voltage allows direct operation from 2.5V, 3.3V, and 5V logic without requiring a dedicated gate driver. Ultra-low RDS(ON) minimizes power loss and heat generation.

Key Specifications

  • Part Number: AO3401A
  • MOSFET Type: P-Channel Enhancement Mode
  • Package: SOT-23
  • Mounting Type: Surface Mount (SMD)
  • Drain-Source Voltage (VDS): −30V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): −4 A
  • Pulsed Drain Current (IDM): −27 A
  • Maximum Power Dissipation (PD): 1.4 W
  • RDS(ON): ≤50mΩ @ VGS=−10V / ≤60mΩ @ VGS=−4.5V / ≤85mΩ @ VGS=−2.5V
  • Gate Threshold Voltage (VGS(th)): −0.5V to −1.3V
  • Technology: Trench MOSFET
  • Pin 1: Gate (G) | Pin 2: Source (S) | Pin 3: Drain (D)

Package Includes

  • 1 x AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)

Note: Image is for representation purpose only.

AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON)

Everything you need to know about AO3401A P Channel MOSFET SOT-23 30V 4A Low RDS(ON) at a glance.

  • Manufacturer Part No.
    AO3401A
  • Device Type
    P-Channel Enhancement Mode MOSFET
  • MOSFET Type
    P-Channel Enhancement Mode
  • Technology
    Trench MOSFET
  • Package
    SOT-23
  • Mounting Type
    Surface Mount (SMD)
  • Drain-Source Voltage (VDS)
    −30V
  • Gate-Source Voltage (VGS)
    ±12V
  • Continuous Drain Current (ID)
    −4 A
  • Pulsed Drain Current (IDM)
    −27 A
  • Maximum Power Dissipation (PD)
    1.4 W
  • RDS(ON) @ VGS=−10V
    ≤50 mΩ
  • RDS(ON) @ VGS=−4.5V
    ≤60 mΩ
  • RDS(ON) @ VGS=−2.5V
    ≤85 mΩ
  • Gate Threshold Voltage (VGS(th))
    −0.5V to −1.3V
  • Pin Configuration
    Pin 1 = Gate (G), Pin 2 = Source (S), Pin 3 = Drain (D)
  • Operating Function
    P-Channel high-side load switching and power management
  • Applications
    High-side load switching, Battery Management Systems (BMS), reverse polarity protection, DC-DC converters, power management, LED backlight control, portable electronics, IoT devices, embedded systems, motor control, PWM switching
  • Suitable For
    Logic-level microcontroller drive (2.5V, 3.3V, 5V), battery-powered compact designs
  • Features
    Ultra-low RDS(ON), logic-level gate drive, trench technology, fast switching, low gate charge
  • Function
    Provides efficient P-Channel high-side switching with minimal power loss for battery and power management circuits
  • Electrical Characteristics
    VDS −30V, ID −4A, IDM −27A, RDS(ON) ≤50mΩ @ −10V, VGS(th) −0.5V to −1.3V
Brand / Vendor Circuitcomps
SKU CC-001119
Category MOSFET

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